Multichannel optical communications module

ABSTRACT

250 μm is the standardized pitch H of the prevalent multichannel ribbonfibers. Current laser diodes and photodiodes have a size larger than 300 μm. Curving lightpaths made on a silicon bench for reconciling the chip size with current ribbonfibers causes bending power loss, optical crosstalk and difficulty of production. Linear parallel lightpaths with a width d for more than one chip site are produced on a bench with a pitch E which is equal to the pitch H of the multichannels. Optoelectronic device chips with a width W satisfying an inequality E&lt;W&lt;2E−d are mounted on the lightpaths at spots which are different from neighboring chips in the longitudinal direction.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a divisional of U.S. Ser. No. 10/383,137, filed Mar.6, 2003, now U.S. Pat. No. 6,882,763, which in turn claims the benefitof Japanese Application No. 2002-100931, filed Apr. 3, 2002.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a parallel multichannel optical communicationsmodule which transmits a plurality of signals via an optical fiberhaving a plurality of element fibers. The optical communications moduleis a concept including a laser diode module, a photodiode module, amodulator module, a demodulator module or an in-line monitor.

2. Description of Related Art

Planar lightguide type (PLC: planar lightguide circuit) modules having aplurality of lightpaths and optoelectronic device chips (LDs or PDs) arepromising modules for coping with forthcoming multichannel opticalcommunications which bring four signals, eight signals or sixteensignals simultaneously via four channels, eight channels or sixteenchannels. The PLC modules would be low-cost, small-sized opticalcommunications devices.

Access of a plurality of laser diodes (LDs) which consume currents oftens of milliamperes induces a variety of drawbacks of inter-channelinterference, crosstalk and degradation caused by concentrated heating.Multicore ribbonfibers with a plurality of element fibers have astandardized pitch of 250 μm. The pitch is defined to be a distancebetween a center of a fiber and a center of a neighboring fiber in aribbonfiber. A problem of a multichannel communications is a narrowpitch of 250 μm of multichannel fibers. A laser diode (LD) or aphotodiode (PD) has a size from 300 μm to 500 μm at present. The narrowpitch prohibits a PLC module from aligning laser diodes in parallel atends of the 250 μm pitch multichannel lightpaths. A contrivance wasproposed for enlarging the pitch by curving lightpaths outward.

{circle around (1)}. M. Shishikura, K. Nagatsuma, T. Ido, M. Tokuda, K.Nakahara, E. Nomoto, T. Sudoh and H. Sano, “10 Gbps×4-channel parallelLD module”, Proceeding of the 2001 Electronics Society Conference ofIEICE, C-3–50, p160

FIG. 33 shows a four channel LD module with enlarging lightwaveguidesproposed by {circle around (1)}. This is an example of four channeltransmitting modules (LD modules) which can be employed inmultiwavelength communications networks. The LD module is built on abench 70. The bench 70 has a lightwaveguide layer 72 on a top. Fourlightwaveguides 73, 74, 75 and 76 are produced on the lightwaveguidelayer 72. Initial ends of the lightwaveguides have a pitch of 250 μmwhich is equal to the standardized pitch (H=250 μm) of ribbonfibers. Thepitch of the lightwaveguides increases in an intermediate portion alonga longitudinal direction. Final ends have a wide pitch of 1000 μm. Laserdiode (LD) chips 77, 78, 79 and 80 are furnished at a 1000 μm pitch onextensions of the final ends of the lightwaveguides. The wide 1000 μmpitch secures wide spatial separation between neighboring laser diodes.{circle around (1)} asserted that crosstalk between neighboring channels(channels 1–2, channels 2–3 and channels 3–4) is less than −40 dB at afrequency of 10 GHz.

The known reference {circle around (1)} solved a problem of the narrowpitch of ribbonfibers by enlarging a width between neighboring channelsto a 1 mm pitch which enables the LD module to mount laser diodes chipson extensions of the final ends of the lightwaveguides. {circle around(1)} succeeded in reducing crosstalk between the neighboring laserdiodes by the enlarged separation.

Exploitation of PLC structures has been desired for reducing cost,increasing productivity and enhancing performance of LD modules, PDmodules and LD/PD modules. Low cost, small-size, high-performance andlarge-scale production is indispensable for prevalence of opticalcommunications subscriber networks. Nobody has yet suggestedmultichannel LD/PD modules built upon the PLC technique. There are,however, some proposals of single-channel LD/PD modules based uponlightwaveguides.

{circle around (2)} Japanese Patent Laying Open No. 11-68705, “Two-wayWDM optical transmission reception module”

proposed a single-channel LD/PD module of a PLC type having a y-branchedlight waveguide made upon a silicon bench. The y-branched waveguideoccupies a wide area on a silicon bench. Due to the space-consumingy-branch a structure of the module proposed by {circle around (2)}cannot be extended to multichannel LD/PD modules for multichannelcommunications.

Pervasion of optical subscriber networks requires low cost andsize-reduction of station LD/PD modules in addition to low cost,small-sized subscriber modules (ONU; optical network unit) which includeonly a single channel with a single laser diode and a single photodiode.

Many subscribers are connected to a single central station by fibers.The number of subscribers is denoted by M. M fibers are required forconnecting M ONUs (subscribers) to a station. The station should have Mpairs of laser diodes and photodiodes for exchanging 2M signals with MONUs. Transmission of a plurality of signals requires ribbonfibers(tapefibers) which have 4, 8, 16 or 32 parallel element fibers in atape.

The central station requires multichannel optical communications modulesfor matching with the ribbonfibers (tapefibers). If the station reliedupon single-channel modules, M single-channel modules should beinstalled at the station for exchanging bi-directional signals with MONUs, which would occupy very wide space in the station. If the stationuses m-channel modules, the number of station modules is reduced from Mto M/m. Reduction of the module number would curtail space forinstalling modules in the station. Multichannel modules are essentialfor the central station.

Most prevalently used ribbonfibers have a pitch of 250 μm. Four, eight,twelve or sixteen channel ribbonfibers have all the standardized 250 μmpitch. A plurality of element fibers align in a plane at a common pitchof 250 μm in popular flat ribbonfibers.

Current ribbonfibers (=tapefibers) have a determined, common pitch of250 μm. The 250 μm pitch is too narrow to make multichannel LD or PDmodules by aligning laser diodes or photodiodes just along extensions ofthe element fibers. The pitch should be enlarged, for example, to 500 μmto 1000 μm for securing enough space for laying LDs or PDs. Wideseparation with margins will solve difficulties of crosstalk or thermaldiffusion.

Current laser diodes or photodiodes have a width more than 250 μm in alateral direction vertical to an axial line. Optoelectronic devices (LDs& PDs) have, in general, a lateral width from 300 μm to 500 μm for thesake of facile production, feasible mounting, easy handling andsufficient thermal diffusion.

Ribbonfibers (tapefibers) have a pitch H=250 μm too narrow for mountingdevices. Installation of laser diodes or photodiodes requires pitchenlarging portions in lightpaths on a bench for coupling to a channelnumber of the laser diodes or photodiodes. The curving pitch enlargingportions of lightpaths will require a long and wide silicon bench havinga length of 10 mm to 15 mm and a width of 6 mm to 15 mm, which dependsupon the channel number. Long and wide silicon benches will cause highcost, large sized multichannel modules.

The narrow width of a 250 μm pitch of standardized ribbon fibersrestricts design of optoelectronic device chips or lightwaveguides.Widening of the 250 μm pitch of ribbonfibers by giving strong curvatureto lightwaveguides on silicon benches causes difficulty on designing andproducing of optoelectronic (LD or PD) modules, which induces a badyield of producing modules.

Sometimes, lightwaveguides formed on a bench are not terminated byphotodiodes or laser diodes. An intermediary photoactive device, whichis neither an LD module nor a PD module, provides a bench with widepitch lightwaveguides or fibers overall furnished on the bench andinstalls photoactive devices halfway on the lightwaveguides for givingsome processing to signal beams propagating in the lightwaveguides andallowing the processed beams to go out of the lightwaveguides. In thecase, a wide pitch of 500 μm to 1000 μm, on the intermediate deviceshould be restored down to the original 250 μm pitch again. Theintermediate module would require twice changes of pitches by makingwidth enlarging curving lightwaveguides and width decreasing curvinglightwaveguides. Change of the pitch increases difficulty offabrication, raises cost of manufacturing, and reduces yield ofproducts.

Prevalent multichannel ribbonfibers have a narrow, standardized pitch of250 μm. Four, eight, twelve or sixteen element fibers are aligned at a250 μm spatial period in a flat ribbonfiber.

It is difficult to mount laser diodes or photodiodes at points aligningat a pith smaller than 250 μm, because current laser diodes andphotodiodes have a side larger than 300 μm at present. Discrepancybetween the chip size and the channel pitch forces multichannel modulesto bend lightwaveguides on a bench for securing wide space for chips. Ifa multichannel module is made without bending lightpaths on a bench, themultichannel module with only linear lightpaths will be a quiteexcellent contrivance for the future of optical communications.

A purpose of the present invention is to provide a linear multichannelsurface mountable type module without curving lightpaths. Anotherpurpose of the present invention is to provide a linear multichannelsurface mountable type module having linear lightpaths which can joinwith a multichannel connector having a ribbonfiber of the conventional250 μm pitch. A further purpose of the present invention is to provide alinear multichannel surface mountable type module having linearlightpaths on which photoactive devices other than laser diodes orphotodiodes can be furnished.

This invention includes two types A and B. Type A means a module inwhich lightpaths are terminated by optoelectronic device chips. Type Bmeans a module in which lightpaths are overall formed on a bench and arenot terminated by optoelectronic devices.

[TYPE A (Lightpaths Terminated by Optoelectronic Devices)]

The present-invention proposes a type A module having a bench, mlightpaths having a width d, having one of n kinds of lengths which isdifferent from the lengths of neighboring lightpaths and aligning with apitch E equal to the fiber pitch H formed on the bench, and moptoelectronic device chips having a width W which satisfies aninequality of E<W<2E−d and being placed behind final ends of thelightpaths on the bench. Type A ensures sufficient space for mountingchips with enough margins by making different lengths of lightwaveguidesand preparing longitudinally different sites for device chips.

The lightpath means a lightwaveguide or an optical fiber formed on abench. The optoelectronic device means a laser diode (LD) or aphotodiode (PD). A laser diode is sometimes written as a laser or an LDin short. A photodiode is sometimes abbreviated to a PD here. Thisinvention includes a laser diode (transmitting) module and a photodiode(PD; receiving) module according to the kind of the optoelectronicdevices (laser or photodiode). This invention differentiateslongitudinal positions of neighboring optoelectronic devices onneighboring lightpaths. The sites of neighboring optoelectronic devicesare different in a longitudinal direction. Discrepancy of thelongitudinal positions of the optoelectronic device sites ensures abouttwice of the channel pitch for mounting the device chips. What isforbidden is the same longitudinal sites for a pair of the mostneighboring devices. The next-neighboring sites can take the samelongitudinal positions. There are n different longitudinal positions andm lightpaths on a bench. The number of allowable sets of chip sites isn(n−1)^(m-1).

[TYPE B (Lightpaths not Terminated by Optoelectronic Devices)]

The present invention proposes a type B module having a bench, mlightpaths having a width d, aligning with a pitch E equal to the fiberpitch H formed overall on the bench, m optoelectronic device chipshaving a width W which satisfies an inequality of E<W<2E−d and beingplaced midway at sites which are different from neighboring sites in alongitudinal direction on the lightpaths on the bench and optionally mphotoactive devices installed upon the lightpaths. Type B ensuressufficient space for mounting chips with enough margins by preparinglongitudinally different sites for neighboring device chips.

Photodiodes have three different versions, that is, a top incidencetype, a bottom incidence type and a front incidence type. Frontincidence type photodiodes should be epi-down mounted on sites formedupon a bench by leveling an emission stripe with cores of thelightpaths. In the case of bottom incidence type photodiodes, wavelengthselective filters should be inserted into the lightpaths and thephotodiodes should be mounted above lightpaths just before thewavelength selective filters in order to guide the beams reflected bythe wavelength selective filters into bottoms of the photodiodes.

In the type B, there are m lightpaths and n different longitudinalpositions for sites of devices. Any site should be different fromneighboring sites in the longitudinal direction. The number of allowablesets of sites is n(n−1)^(m-1).

Optionally furnished photoactive devices are polarizers, isolators,wavelength selective filters, monitoring photodiodes, rod lenses,gratings, photomodulators, photoamplifiers and so forth.

SUMMARY OF THE INVENTION

-   (1) The present invention proposes a low-cost, small-sized,    practical-surface mountable type optical communications module which    is congenial to the small pitch of prevalent. multichannel fibers.-   (2) The present invention dispenses with enlarging and fine-curving    lightpaths, which alleviates the difficulty of manufacturing and    curtails fabrication cost.-   (3) The present invention succeeds in decreasing electrical and    optical crosstalk between neighboring channels, since optoelectronic    devices are widely separated in the longitudinal direction.-   (4) The modules of the present invention can be easily attached to    or detached from a ribbonfiber via a connector by a couple of    guidepins and guideholes.-   (5) The present invention enables prevailing inexpensive MT    connectors to connect with ribbonfibers which ensures a wide scope    of applications.-   (6) The modules of the present invention can be produced on mass    scale by transfermolding technique.-   (7) A long bench enables the present invention to install more than    one photoactive device on the same lightpaths, which brings about a    wide scope of applications. A multichannel laser/photodiode(LD/PD)    module is obtained by mounting a laser and a photodiode on the same    lightpath. A modulatable light source is built by laying a    photomodulator and a laser on the same lightpaths.-   (8) The present invention is suitable for making intermediary    devices which are interposed between two ribbonfibers for giving    some functions on light beams propagating in the multichannel    fibers. The intermediate devices mean for example, multichannel    photoamplifiers, multichannel inline power monitors, and    multichannel photomodulators.-   (9) The modules made by the teaching of the present invention are    small-sized, low-cost, highly-reliable devices suitable for mass    scale production.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of Embodiment 1 of the present invention formingfour parallel lightwaveguides whose lengths change shorter and longerreciprocally in turn with a pitch E equal to the fiber pitch H of aribbonfiber on a bench and mounting four optoelectronic devices (LDs orPDs) on metallized pads made at reciprocally arranged points behindfinal ends of the lightwaveguides on the bench.

FIG. 2 is a longitudinally-sectional side view of Embodiment 1 sectionedalong a shorter lightwaveguide Gc.

FIG. 3 is another longitudinally-sectioned side view of Embodiment 1sectioned along a longer lightwaveguide Gd.

FIG. 4 is a horizontally-sectioned plan view of Embodiment 2 formingfour parallel lightwaveguides whose lengths change shorter and longerreciprocally in turn with a pitch E equal to the fiber pitch H of aribbonfiber on a bench, mounting four optoelectronic devices (LDs orPDs) at reciprocally arranged points behind final ends of thelightwaveguides on the bench, fixing the bench upon a leadframe,connecting metallized patterns to leadpins by wirebonding, fixingguidepins on V-grooves and being encapsulated in a resin package, whichis in a coupled state with an MT connector maintaining ends of aribbonfiber.

FIG. 5 is a vertically-sectioned side view of Embodiment 2 sectionedalong a longitudinal line crossing a guidepin.

FIG. 6 is a vertically-sectioned side view of Embodiment 2 sectionedalong another longitudinal line crossing a longer lightwaveguide Gd.

FIG. 7 is a plan view of Embodiment 5 of the present inventionfurnishing four parallel optical fibers whose lengths change shorter andlonger reciprocally in turn with a pitch E equal to the fiber pitch H ofa ribbonfiber in V-grooves on a bench and mounting four optoelectronicdevices (LDs or PDs) on metallized patterns formed at reciprocallyarranged points behind final ends of the optical fibers on the bench.

FIG. 8 is a vertically-sectioned side view of Embodiment 5 sectionedalong a longitudinal line crossing a shorter optical fiber and a deviceDc.

FIG. 9 is a vertically-section front view of Embodiment 5 sectionedalong a lateral line crossing the V-grooves.

FIG. 10 is a plan view of Embodiment 6 forming four parallellightwaveguides whose lengths linearly increase from the shortest Ga tothe longest Gd in this order with a pitch E equal to the fiber pitch Hof a ribbonfiber on a bench, mounting four optoelectronic devices (LDsor PDs) on metallized pads formed at linearly distance-increasing pointsbehind final ends of the length-increasing lightwaveguides on the bench.

FIG. 11 is a vertically-sectioned side view of Embodiment 6 sectionedalong a longitudinal line crossing the longest lightwaveguide Gd.

FIG. 12 is a plan view of Embodiment 7 forming four parallel overalllightwaveguides with a pitch E equal to the fiber pitch H of aribbonfiber on a bench, mounting four optoelectronic devices (LDs orPDs) on metallized pads formed at points whose distances from the frontedge linearly increase halfway on the lightwaveguides and connecting theoptoelectronic devices to metallizes by wirebonding.

FIG. 13 is a vertically-sectioned side view of Embodiment 7 cut along alongitudinal line crossing an overall lightwaveguide Gb.

FIG. 14 is a horizontally-sectioned plan view of Embodiment 8 formingfour parallel lightwaveguides whose lengths change shorter and longerreciprocally in turn with a pitch E equal to the fiber pitch H of aribbonfiber on a bench, making gratings on the lightwaveguides, mountingfour optoelectronic devices (LDs or PDs) at reciprocally arranged pointsbehind final ends of the lightwaveguides on the bench and connectingmetallized patterns to leadpins by wirebonding.

FIG. 15 is a vertically-sectioned side view of Embodiment 8 sectionedalong a shorter lightwaveguide Ga.

FIG. 16 is an explanatory figure for illustrating the function of agrating in Embodiment 8 having a laser diode and the grating.

FIG. 17 is an explanatory figure for demonstrating the function of agrating in Embodiment 8 having a photodiode and the grating.

FIG. 18 is a plan view of Embodiment 9 forming four parallellightwaveguides whose lengths linearly increase from the shortest to thelongest in the order with a pitch E equal to the fiber pitch H of aribbonfiber on a bench, embedding second photoactive devices halfway onthe lightwaveguides, mounting four optoelectronic devices (LDs or PDs)on metallized pads at points behind final ends of the length-increasinglightwaveguides on the bench, and connecting metallized patterns toleadpins by wirebonding.

FIG. 19 is an explanatory figure for demonstrating the function ofpolarizers which are employed in Embodiment 9 as a second photoactivedevice.

FIG. 20 is an explanatory figure for demonstrating the function ofisolators which are employed in Embodiment 9 as a second photoactivedevice.

FIG. 21 is an explanatory figure for demonstrating the function ofwavelength selective filters which are employed in Embodiment 9 as asecond photoactive device.

FIG. 22 is a plan view of Embodiment 10 forming four parallellightwaveguides whose lengths linearly increase from the shortest to thelongest in the order with a pitch E equal to the fiber pitch H of aribbonfiber on a bench, upholstering second photoactive devices behindends of the length-increasing lightwaveguides, and mounting fouroptoelectronic devices (LDs or PDs) on metallized pads at pointsfollowing the second photoactive devices.

FIG. 23 is a vertically-sectioned side view of Embodiment 10.

FIG. 24 is an explanatory figure for demonstrating the function of rodlenses which are employed in Embodiment 10 as a second photoactivedevice.

FIG. 25 is a plan view of Embodiment 11 forming four parallel overalllightwaveguides with a pitch E equal to the fiber pitch H of aribbonfiber on a bench, making gratings halfway on the overalllightwaveguides, mounting four photoactive devices (photomodulators,photoamplifiers, power monitors) on metallized pads formed at cavitypoints whose distances from the front edge linearly increase halfway onthe lightwaveguides and connecting optoelectronic devices to metallizesby wirebonding in a state coupled with a forward connector and a rearconnector with guidepins and guideholes.

FIG. 26 is a sectional view of Embodiment 11 sectioned along a lateralline crossing Db for showing a photoactive device laid in a cavity forlevelling the device with the lightwaveguide.

FIG. 27 is a sectional view of Embodiment 11 sectioned along alongitudinal line crossing Db for showing a photoactive device laid in acavity for levelling the device with the lightwaveguide.

FIG. 28 is an explanatory figure for demonstrating the function ofphotoamplifiers which are employed in Embodiment 11 as a photoactivedevice.

FIG. 29 is a plan view of Embodiment 12 forming four parallel overalllightwaveguides with a pitch E equal to the fiber pitch B of aribbonfiber on a bench, mounting four bottom incidence type photodiodeson metallized pads formed at points whose distances from the front edgelinearly increase halfway on the lightwaveguides, installing wavelengthselective filters facing slantingly upward behind the bottom incidencetype photodiodes and connecting optoelectronic devices to metallizes bywirebonding.

FIG. 30 is a vertically-sectioned view of a part of Embodiment 12 forexhibiting a receiving signal beam being reflected by a wavelengthselective filter upward into a photodiode.

FIG. 31 is a perspective view of Embodiment 3 having guidepins on afront for attaching to and detaching from an MT connector withguideholes.

FIG. 32 is a perspective view of Embodiment 4 having guideholes on afront for attaching to and detaching from an MT connector withguidepins.

FIG. 33 is a perspective view of the known parallel laser diode modulehaving enlarging lightwaveguides proposed by {circle around (1)} M.Shishikura, K. Nagatsuma, T. Ido, M. Tokuda, K. Nakahara, E. Nomoto, T.Sudoh and H. Sano, “10 Gbps×4-channel parallel LD module”, Proceedingsof the 2001 Electronics Society Conference of IEICE, C-3–50, p160.

DETAILED DESCRIPTION OF THE PREFERRED-EMBODIMENTS

Requirements of the present invention are described.

(1) Equality of Pitches (E=H)

The pitch E of m linear lightpaths (lightwaveguides or fibers) for mchannels should be equalized to the pitch H of ribbonfibers. Thestandardized pitch H is 250 μm. But the present invention should not berestricted to H=250 μm. For any value H. E=H should be maintained.

(2) Longitudinally Different Sites for Neighboring OptoelectronicDevices

Any pair of neighboring optoelectronic device chips should be installedat sites which are different in the longitudinal direction for allowingthe device chips to occupy enough space.

(3) Optoelectronic Devices

Optoelectronic devices include light emitting devices (a) andphotodetecting devices (b).

(a) Light Emitting Devices

-   laser diodes . . . InP-LD, InGaAsP-LD, GaAs-LD-   light emitting diodes . . . InP-LED, InGaAsP-LED, GaAs-LED    (b) Photodetcting Devices-   photodiodes InGaAs—PD, InGaAsP—PD, Ge—PD, Si—PD-   avalanche photodiode (APD)-   photodiode types front incidence type photodiode, top incidence type    photodiode, bottom incidence type photodiode    (4) Photoactive Devices (Additionally Furnished Upon Lightpaths)    (c) Photoamplifier (or Semiconductor Optical Amplifier; SOA)

A photoamplifier absorbs an input beam up and produces a stronger outputbeam with the same wavelength in proportion to input power. For example,a laser diode biased slightly under the threshold current amplifiesinput beams.

(d) Grating

A grating is one kind of diffractive optical elements which reflect onlyone wavelength to a determined diffraction angle by Bragg's reflectioncondition. Here, the grating means a planar grating which is a set ofrepetitions of spots with higher refractive indices along thelightpaths. The diffraction angle is restricted to be 90 degrees. Areflective wavelength can be determined by the pitch of the grating.Gratings are useful for multiwavelength networks.

(e) Photomodulator

A photomodulator (light modulator) is a device which changes light powerin proportion to a bias voltage. An LiNbO₃ modulator, InP modulator,InGaAsP modulator, and GaAs modulator are available.

(f) Polarizer

A polarizer is a device which changes elliptical, circular polarizationinto linear polarization. A prism polarizer and a film polarizer areapplicable.

(g) Isolator

An isolator is a cylindrical device comprising a polarizer, a Faradayrotation element, an analyzer, and a magnet. An isolator has a functionof preventing beams reflected from turning back.

(h) Wavelength Selective Filter or Mirror

A wavelength selective filter is built with many piled sets of two kindsof dielectric layers with different refractive indices. A mirror is madewith metallic thin films piled upon a substrate.

(i) Converging Lens

-   Ball lens . . . inexpensive-   Rod lens . . . cylindrical lenses which are suitable for embedding    in grooves    (j) Others

Prisms or others which have some action on propagating light.

(4) No Restriction on Allocation of Chips

There is no restriction upon deviation of chips. Reciprocal allocation,slantingly aligning allocation (arithmetic progression) and randomallocation are available.

There are n different positions (n≦m) for sites in the longitudinaldirection. The number of probable sets is given by n(n−1)^(m-1). Theprobable set number is 2 for m=4 and n=2. The probable set number is 24for m=4 and n=3. The set number is 108 for m=4 and n=4. For m=8, theprobable set number is 2 for n=2 and 384 for n=3. Following embodimentsdescribe only one set of probable sites but include other sets of sitesimplicitly.

An increment of probable position number n forces to raise a necessarylength s of a bench. When a necessary length for allocating a chip is pand an extra length is r, the length s of the bench is given by s=np+r.

Although a plurality of chips with standardized widths have not beenable to be arranged on the bench at a pitch of fibers, this inventioncan realize the arrangement of the chips on the bench. This inventioncan smoothly make an optical communications module of small size and lowcost.

A distance between LDs and PDs can be also enlarged. Optical crosstalkand electrical crosstalk can be greatly suppressed. This inventionalways has this effect with no relation to widths of LDs and PDs.

Also, optical and electrical crosstalk is further reduced by allocatingchips reciprocally and slantingly (like arithmetic progression).

(5) Wide Chips

In the case of chips with a wide width, if the width of the chip is W, apitch of waveguides is E, and a width of the waveguide is d, the chipcan be used when W<2E−d and the chip can be more effective whenE<W<2E−d.

(6) Combination of Optoelectronic Devices and Photoactive Devices

One waveguide can have a plurality of chips thereon. For example, acombination of an isolator and an LD can be realized in a module.Integration of chips can be improved and functions of the chip aregreatly progressed.

When a plurality of chips are allocated on a substrate, positions of thechips can be accurately decided by photolithography. Rapid transmissionof more than 1 Gbps can be stably realized by the combination of anisolator and an LD.

(7) Leadframe and Package

This module can use a leadframe for electrically connecting withexternal devices. Low cost and freely wiring can electrically interfacewith the external devices. A package can be made by transfermolding themodule with an epoxy resin. The resin molding can make this module lowcost and high reliable.

(8) Guidepin and Guidepin Hole

Guidepins or guidepin holes are produced on a Si substrate forfacilitating optical and electrical connection with external tapefibers.If so, the conventional standardized MT connectors can be employed forthis invention and facile connection with the standardized MT connectorscan be realized by the pins and holes.

(9) Possible External Devices

Optical signals processed by chips of this module can be transmitted toexternal tapefibers through light waveguides. For example, small sizedmultichannel inline monitors or small sized multichannel photoamplifyingrelays can be produced with low cost.

(10) Metallized Patterns

If necessary, metallized patterns for connecting PDs with externalcircuits can be made on most of a surface of light waveguides. And forexample, a preamplifier can be also produced on the surface. Freelywring and reception with low noise can be obtained.

Embodiment 1 (Multichannel LD Module, Multichannel PD Module,Lightwaveguides, Reciprocal; FIGS. 1 to 3)

Embodiment 1 makes m parallel straight shorter and longerlightwaveguides (lightpaths) of a pitch E which is equal to the pitch Hof standardized m channel optical fibers on a bench and mounts m laserdiodes or m photodiodes just behind ends of the m lightwaveguides on amiddle portion or a rear portion of the bench reciprocally. A fourchannel example (m=4) is here shown in figures. Embodiment 1 can beextended also to another module of eight channels, sixteen channels orany higher number channels.

FIG. 1 denotes a plan view of Embodiment 1. FIG. 2 denotes a verticalsectioned view cut along a line on a shorter lightwaveguide. FIG. 3shows another vertical section cut along another line on a longerlightwaveguide. Embodiment 1 builds an LD or PD module upon arectangular bench 2. An insulating layer 3 is prepared upon the bench 2.A lightwaveguide layer 4 is formed upon a front half of the insulatinglayer 3 on the bench 2. The lightwaveguide layer 4 includes fourparallel cores (lightpaths) 5 of a higher refractive index which areenclosed by the lightwaveguide layer as a cladding 6 with a lowerrefractive index. The cores, which have a square section of a e.g., 10μm side in the cladding (lightwaveguide) layer, are aligned at a pitchof E. The lightpath pitch E is equal to the pitch H of outerribbonfibers which will be joined to Embodiment 1. Four parallellightpaths 7 are able to install four optoelectronic units (four laserdiodes or four photodiodes) on the same bench.

Four units (LDs or PDs) are designated by A, B, C and D. Smallcharacters a, b, c and d are affixed to objects which pertain to theunits as a suffix. The lightpaths 7 are denoted by Ga, Gb, Gc and Gd.Longer lightpaths Gb and Gd of a length “l” and shorter lightpaths Gaand Gc of a length “s” are aligned in turn in a lateral direction. Endsof the lightpaths are different. The discrepancy of end points ensuresenough space with a double lightpath width for accommodatingoptoelectronic device chips. “W” denotes a width of an optoelectronicchip. “E” is a pitch of the lightpaths. A width of the lightpath isdenoted by “d”. Longitudinally reciprocating ends of the lightpaths givea favorable relation satisfying an inequality of E<W<2E−d. Theinequality clearly shows a gist of the present invention.

Shorter lightwaveguides (lightpaths) Ga and Gc are followed by formermetallized pads Ua and Uc formed on a middle region of the insulatinglayer 3. Longer waveguides Gb and Gd are followed by latter metallizedpads Ub and Ud formed on a rear region of the insulating layer 3. Zigzagarranged metallized pads allow the module to accommodate optoelectronicdevices which are larger than the lightpath pitch E at the ends of thelightpaths. Here, the optoelectronic devices “D” are photodiodes (PDs)or laser diodes (LDs). A metallized pad Va is made near the metallizedpad Ua. Metallized pads Vc and Tc are produced on the outside of the padUc for connecting an inner Dc chip since the Dc chip has no extra space.Da is connected with Va by a wire Wa and Dc is connected with Vc by awire Wc. The metallized pads Uc and Tc are connected by a wire Sc.

A metallized pad Ub is made at the end of the longer lightwaveguide Gband a metallized pad Ud is made at another end of another longerlightwaveguide Gd. And an optical device Db is bonded on the pad Ub andanother optical device Dd is also bonded on the pad Ud. Anothermetallized pads Vb and Vd are made near Ub and Ud for connecting Db orDd. The optical device Db is wire-bonded to the pad Vb by a wire Wb andthe optical device Dd is also wire-bonded to the pad Vd by another wireWd. Here, these optical devices Da, Db, Dc and Dd are all photodiodes orall laser diodes and do not include both PDs and LDs.

Since the lightwaveguides have different lengths, rear ends of thelightwaveguides are reciprocally positioned at forward points (Ga & Gc)or at backward points (Gb & Gd). Positions of mounting optoelectronicchips are not equal but different in the longitudinal direction. Zigzagarrangement of chips is a feature of the present invention. A currentautomatic chip mounting apparatus can easily mount chips at zigzag-lyingspots on a substrate. This is an example of lightwaveguides aslightpaths. Alternatively, optical fibers can be parallel lightpathsembedded in a silicon bench instead of the lightwaveguides.

The lightwaveguides can use SiO₂ type waveguides. In this case, a cladof the waveguide is made of SiO₂ and a core of the waveguide is made ofGe doped SiO₂. The core has a section of 6 μm side. An upper clad orlower clad has a 10 μm thickness. The lightwaveguides can be made byspattering or a CVD method. As a lightwaveguide, besides the SiO₂ type,a polymer type lightwaveguide can be often used. The SiO₂ type waveguidehas an advantage of less transmission loss. Having a little biggertransmission loss, the polymer type waveguide has an advantage of facileproduction by spin coating with low cost.

A silicon single crystal can be utilized as the bench 2, which is calleda silicon bench. Ceramics and metals can be materials for the bench. Aceramic (Al₂O₃, AlN, SiN, ZrO, TiO etc.) bench has an advantage ofinsulating electric circuits and devices from each other due to highresistivity. A metallic bench should be preliminarily coated with aninsulating film. The insulating film 3 is indispensable for a metallicbench or silicon bench. A ceramic bench can dispense with the insulatingfilm 3. In the case of a Si substrate, the insulating film 3 is of SiO₂made by heat-oxidizing or a CVD method. When the rectangular Sisubstrate of 2 mm×5 mm is utilized, four channel units can be depositedon the substrate. If a size of the substrate is enlarged, eight channelor sixteen channel units can be realized on the substrate. Even if anumber of the channels or the waveguides increases, the advantage ofzigzag chip arrangement is unchanged.

Laser diode chips or photodiode chips utilized in optical communicationshave a length of 300 μm to 500 μm, a width of 300 μm to 500 μm and athickness of 150 μm to 400 μm. Since the fiber pitch H of a ribbonfiberis 250 μm, the pitch E of linear lightwaveguides formed on a siliconbench is also 250 μm. When the path width d is d=26 μm, the chip width Wshould satisfy an inequality of 250 μm<W<474 μm, which is a moderatecondition.

In the case of LD modules, laser diodes are epi-down mounted onmetallized pads at positions which allow emission stripes of the LDs toalign along extensions of the lightwaveguides. In the case of PDmodules, front incidence type photodiodes are used. For opticalcommunications of 1.3 μm and 1.5 μm wavelengths. InGaAsP type laserdiodes or InGaAs type photodiodes can be utilized.

The FIGS. 1 to 3 of Embodiment 1 illustrate a half-produced modulehaving the chips on the substrate, but actually, a leadframe should beinstalled on the module, a transparent resin should cover betweenwaveguide ends and chips, another resin should cover other space and themodule should be installed in a package. After this, such concretestructures will be described in another Embodiments of this invention.

Embodiment 2 (Leadframe, MT Connector, Transparent Resin; FIGS. 4 to 6)

This Embodiment clarifies how to interface with external devicesconcretely. FIG. 4 denotes a plan view of Embodiment 2. FIG. 5 denotes avertical sectional view cut along a plane including a guidepin. FIG. 6shows another vertical section cut along a plane including a longerlightwaveguide.

Embodiment 2 lays a prepared bench on a leadframe, covers a part with atransparent resin, fits guidepins on the bench and packages the benchwith an outer rigid resin for coupling to an MT connector having aribbonfiber by guidepins and guideholes. The outer resin package isformed by transfermolding in a metallic mold. The guidepins andguideholes ensure facile attachment to and detachment from the MTconnector. Other features are similar to Embodiment 1.

In FIGS. 4, 5 and 6, Embodiment 2 is built upon a rectangle bench 2. Aninsulating layer 3 is made upon the bench 2. A lightwaveguide layer 4 isproduced upon the insulating layer 3. Four parallel linearlightwaveguides (lightpaths) Ga, Gb, Gc and Gd with reciprocally varyinglengths are formed in the lightwaveguide layer 4 at a pitch E. Thelightwaveguides are cores of a higher refractive index produced in thelightwaveguide layer of a lower refractive index as a cladding. Ga andGc are shorter lightpaths. Gb and Gd are longer lightpaths. Final endsof Ga and Gc lie at middle spots. Final ends of Gc and Gd lie atbackward spots. Space just behind the final ends of the lightpaths isbases for mounting optoelectronic chips. Metallized patterns are printedupon the bases at the back of the lightpath final ends. Optoelectronicdevices (laser diodes or photodiodes) Da, Db, Dc and Dd are mounted uponthe metallized patterns. The metallized patterns are joined to otherpatterns or leadpins by wirebonding. Details are not described, sincethe metallizes, wires and leadpins are similar to Embodiment 1. Theoptoelectronic device chips mean either laser diodes (LDs) or frontincidence photodiodes (PDs) which are epi-down mounted.

A ribbonfiber 20 is a long cable for optical communications and has fouroptical fibers Fa, Fb, Fc and Fd in the same plane. A pitch B of thefour fibers Fa, Fb, Fc and Fd in the ribbonfiber 20 is 250 μm. The 250μm pitch H is too narrow to allocate chips thereon, so that the presentinvention has an effective structure for the narrow pitch. An MTconnector 22 enclosing the ribbonfiber 20 is used for connecting theribbonfiber 20 to external optical devices. The MT connector 22 fixes anend of the ribbonfiber 20 with a resin. At the end of the ribbonfiber20, the four element fibers Fa, Fb, Fc and Fd appear on the same plane.As shown in FIG. 6, each of the four element fibers in the ribbonfiber20 has a core 27 and the core 27 is coupled with a core 5 of thelightwaveguide 4. The fiber core 27 is enclosed with a clad up and down.

Either guidepins 23 or guideholes 24 are made at peripheries on a frontend of the package for connecting the MT connector to the module.V-grooves 25 are made on a forefront of the module for fixing ownguidepins or allowing connector guidepins to attach or detach. In acase, an MT connector has guidepins and a module has guideholes. Inanother case, a connector has guideholes and a module has guidepins.

The bench 2 is glued to a central part (base metal) of a leadframe 30which has been prepared by punching a metallic thin plate into an outerframe, leadpins connecting to the outer frame and the base metalconnected by the leadpins to the outer frame. When the bench 2, the basemetal of the leadframe and devices have been packaged, outer portions ofthe leadpins are cut from the outer frame and the leadpins projectingoutward remain on side of a package.

FIG. 4 shows the leadpins separated from the outer frame, which hasunified all leadpins and the base metal in a single plate. The leadframe30 comprises leads 32–40, 42, 43 and 44 at both peripheries and the widebase metal 30 at the center. The leads 32 and 44 are ground-leadsconnecting to the base metal 30. Other leadpins are joined to metallizedpatterns connected with optoelectronic devices Da, Db, Dc and Dd viawires.

Metallized pads Ua and Va for the optoelectronic device Da are joinedvia wires 46 and 47 to the leadpins 33 and 34. Metallized pads Ub and Vbfor Db are connected via wires 48 and 49 to the leadpins 36 and 37.Other devices Dc and Dd are connected to the outer leadpins via wires ina similar manner.

When the optoelectronic devices have been coupled to the leadpins bywirebonding, an elastic transparent resin 28 is supplied on the bench 2for filling space between ends of the lightwaveguides Ga to Gd and theoptoelectronic devices Da to Dd. The transparent resin 28 should have arefractive index similar to the waveguides for suppressing scatteringand reflection at the ends of the lightwaveguides. Then, thehalf-products, which include the silicon bench, the devices, theleadpins and the wires, are transfermolded in a metallic mould with arigid resin 29, for example, an epoxy resin for packaging.

A plastic-packaged optoelectronic module 55 has been produced. In themodule 55, the packaging resin 29 encloses the bench 2, the devices Dato Dd, the base metal and roots of the leadpins. Ends of the leadpinsproject from the sides of the package resin 29. A front of the packagehas either guidepins projecting forward or guideholes perforatedbackward in the longitudinal direction.

FIGS. 4, 5 and 6 demonstrate Embodiment 2 coupled with the MT connector22 on the left. Only the righthand portion shows the module.

Embodiment 3 (Guidepins/Module & Holes/Connector; FIG. 31)

Allocation of guidepins and guideholes is alternative to a connector anda module. Embodiment 2 can otherwise be a module with guideholes forcoupling to a connector with projecting guidepins. Two kinds ofallocation of pins and holes are described here. Embodiment 3 allotspins to a module and holes to a connector.

FIG. 31 denotes a guidepin-carrying module and a guidehole-bearingconnector. In the module, guidepins 23, which are embedded with anadhesive in V-grooves formed on the bench 2 at inner roots, project fromthe forefront of the module 55. On the forefront, front ends of thelightwaveguides Ga, Gb, Gc and Gd align at a 250 μm pitch in the sameplane as the forefront.

An MT connector 22 has a ribbonfiber 20 tailing from the back.Guideholes 24 and 24 are formed on the front of the connector 22 in thelongitudinal direction. Ends of the fibers Fa, Fb, Fc and Fd appear onthe connector front at the common pitch (H=250 μm). When the guidepins23 and 23 are inserted into the guideholes 24 and 24, the ends of Fa,Fb, Fc and Fd of the ribbonfiber come into contact with ends of Ga, Gb,Gc and Gd of the module.

Embodiment 4 (Guideholes/Module & Pins/Connector: FIG. 32)

FIG. 32 shows Embodiment 4 which assigns guidepins to a connector (MTconnector) and guideholes to a module. The guidepins 23, which areinserted and fixed in longitudinal holes of the MT connector 22, projectforward. Ends of fibers Fa, Fb, Fc and Fd appear on the front surface ofthe connector. Guideholes 25 and 25 are prepared in the longitudinaldirection on the front of the module 55. Front ends of lightwaveguidesGa, Gb, Gc and Gd align on the front at a 250 μm pitch.

When the guidepins 23 and 23 of the MT connector 22 are infixed into theguideholes 25 and 25 of the module 55, the ends Fa, Fb, Fc and Fd of theribbonfiber face and bunt to Ga, Gb, Gc and Gd of the lightwaveguides ofthe module 55.

Embodiment 5 (Fiber Lightpaths, Multichannel LD or PD Module, ReciprocalLengths; FIGS. 7 to 9)

A gist of the present invention is to ensure sufficient space of a(2E−d) width to a chip by differentiating lengths of the lightpaths onthe bench. Although the lightpaths are not curved but straight,differentiation of lengths enables a module to find an enough room formounting a chip which is larger than the lightpath pitch E. Twodifferent kinds of lightpaths are available for preparing on a bench.One kind is a lightwaveguide. The other kind is an optical fiber. Bothlightwaveguides and optical fibers are equivalently useful as lightpathson a bench. Embodiment 5 employs optical fibers as lightpaths built onthe bench.

FIG. 7 shows a plan view of a main portion of Embodiment 5 on a bench.FIG. 8 is a sectional side view of the bench portion of the same cutalong a shorter optical fiber (lightpath). FIG. 9 is a sectional view ofthe same cut along a vertical plane perpendicular to the optical fibers.

Parallel V-grooves 56, 57, 58 and 59 with different lengths areperforated at a pitch E on a front half of the bench 2. Four V-grooveshave different lengths. The V-grooves 56 and 58 are shorter. The otherV-grooves 57 and 59 are longer. Optical fibers 62, 63, 64 and 65 areembedded into the V-grooves. Each optical fiber has the same length asthe pairing V-groove. The optical fiber consists of a core 67 with ahigher refractive index and a cladding 66 with a lower refractive indexwhich encloses the core.

A quartz single-mode fiber has a cladding of a 125 μm diameter and acore of a 10 μm diameter. The length difference between longer fibersand shorter fibers should be determined to give an enough room forallowing a chip to lie thereupon. Metallized patterns Ua to Ud, Va to Vdand Tc are produced on the bench 2. This example mounts optoelectronicdevices Da and Dc at former spots and Db and Dd at backward spots.Electrodes of chips are joined to the metallized patterns by wirebondinglike Embodiments 1 and 2. The whole of Da, Db, Dc and Dd are either aset of photodiodes or a set of laser diodes. The number of the devicesis equal to the number m of channels.

In this case, available space for mounting a chip has a width ofW=(2E−d), where d is a width of a lightpath and E is a pitch of thelightpaths. Although a lightwaveguide has a small width, an opticalfiber has a large width of d=125 μm. Since E=250 μm and d=125 μm, theallowable width for a chip base is 250 μm<W<375 μm. The (2E−d) allowsspace to mount a chip of, e.g., a 300 μm side.

FIGS. 7, 8 and 9 denote only a half-product. This Embodiment is alsocompleted by supplying a transparent resin, fining leadpins, formingwiring patterns, making guidepins/holes and transfermolding thehalf-product with a resin into a package like Embodiments 1 and 2.

Embodiment 6 (Four Step End Lightpaths, Multichannel PD/LD Module; FIG.10 and 11)

The former Embodiments employed a reciprocal change of path lengths attwo steps and settled the ends of the paths at two different distances.The least of the number n of longitudinally different lengths is 2. Ingeneral, the number n of longitudinally different lengths is m in thecase of m fibers and m channels. The greatest number of the differentlengths of the lightpaths is also m. The number of the different lengthsis from two to m (2≦n≦m).

A smaller number n of different lengths enables a module to reduce thelength of a bench further. However, a small number n of different pathlengths is unsuitable for decreasing crosstalk (inter-channel crosstalk)among the optoelectronic chips.

A larger number n of different path lengths forces to use a bench of alonger length. A large bench can suppress inter-channel crosstalk byseparating the optoelectronic chips. A wide bench has an additionaladvantage of admitting extra space to accommodate other devices,circuits and patterns.

The present invention differentiates lengths of every pair ofneighboring lightpaths. Different pathlengths mean that neighboringlightpaths have different final ends, because the initial positions areall equal. In the case of four channel (m=4) having only two finalpositions (n=2) like Embodiments 1–5, the number Q of probable sets oflightpaths is Q=2. The number Q of probable sets increases as thepermitted final positions rise. If three final positions are permitted(n=3), the probable set number is enhanced to Q=24. When four final setsare allowed (n=4), Q=108 sets of pathlengths are permitted. Thisrelation is valid for four channel cases. An increment of the channelnumber, for example, eight channel, sixteen channel, heightens furtherthe number of probable sets of different lightpaths.

General formulae should be derived here. When an object system has mchannels and a module permits n positions for final spots of lightpaths,the number of probable sets of different lightpaths is Q=n(n−1)^(m-1). Avariety of sets of probable lightpaths increases a degree of freedom anddecreases mutual crosstalk. However, the increase of final positions hasa drawback of elongating the bench. Space for accommodating a singledevice is denoted by “p”. Extra space is given by “r”. A necessarylength s of a bench is given by s=np+r.

FIG. 10 and FIG. 11 shows Embodiment 6 which is a four channel (m=4)example with four final positions (n=4). Embodiment 6 has fourlightpaths Ga, Gb, Gc and Gd with stepwise increasing pathlengths inthis order. Optoelectronic chips Da, Db, Dc and Dd, which align along aslanting line, have base sites stepwise receding at a pitch of p in thesame order.

Sets of metallizes Ua and Va, Ub and Vb, . . . are allotted along theslanting line on a lightwaveguide layer 4 on a bench 2. Dc hasmetallizes Vc and Tc on the lightwaveguide layer 4 in this example. Vcand Tc have a different height from other metallizes. A lightwaveguidemade of silicon dioxide (SiO₂) has a 6 μm square core and 10 μm thickunder-& over-cladding layers. A total of the lightwaveguide layer is 26μm, which is a small difference of heights for wiring patterns.

In FIG. 10, Da, Db, Dc and Dd have vacant sides on an insulating layer3. Since the optoelectronic chips should be fined on the sites lying onextensions of the lightpaths Ga, Gb, Gc and Gd, the width W for allowingto a single chip is restricted by E<W<2E−d, which is similar to theformer examples.

The optoelectronic devices mean either laser diodes or photodiodes.Embodiment 6 can give a four channel transmitting (LD) module byinstalling four laser diodes epi-down (upside down) on the sites. In LDcases, the vacant space can be utilized by mounting LD-driving ICs.Otherwise, Embodiment 6 can give a four channel receiving (PD) module bymounting four front-incidence type photodiodes on the slanting sites. Inthe case of PD modules, a four-channel preamplifier or fourpreamplifiers can be furnished upon the vacant space on the insulatinglayer 3, which reduces external noise.

Embodiment 6 is an example of four channel modules with four differentfinal positions n=4. Four channel ones (m=4) with four positions (n=4)have other 107 cases than the one described in FIG. 10. Descriptions ofthe other 107 cases are omitted for avoiding tedious repetitions.

Embodiment 7 (Multichannel PD Module, Bottom Incidence PD; FIGS. 12 and13)

All the embodiments described hitherto can be applied both to LD modulesand PD modules. In the case of PD modules, only front incidence typephotodiodes are available, since the photodiodes are upside down fittedon the sites. Photodiodes have other types of top incidence type andbottom incidence type. The bottom incidence type ones are preferablephotodiodes which have a wide aperture, high sensitivity, a widetolerance and feasible installation. FIGS. 12 and 13 show Embodiment 7of another 4-channel PD module built with bottom incidence typephotodiodes.

A lightwaveguide layer 4 is prepared overall upon a bench 2. Fourparallel straight lightwaveguides Ga, Gb, Gc and Gd are made from aninitial end to a final end of the bench 2. If the lightpaths(lightwaveguides) extend to the rear ends, other four channel devicescan be serially connected to the final ends. The bottom incidence typeallows a lightpath to extend over the photodiode, which gives an extradegree of freedom of designing. Lightwaveguides (lightpaths) 7 are, inpractice, cores 5 (FIG. 13) enclosed by claddings 6 which are equivalentto the lightwaveguide layer 4 like former embodiments. There is a slightdifference of refractive indices between the core 5 and the cladding 6.Hole-carrying submounts Ba, Bb, Bc and Bd are mounted and wavelengthselective filters Ma, Mb, Mc and Md are slantingly embedded halfway uponfour channel lightpaths Ga, Gb, Gc and Gd. The wavelength selectivefilters play a role of selectively reflecting a set of beams propagatingfrom the front ends slantingly upward to holes of the submounts andallowing another set of beams propagating from the rear ends. Bottomincidence type photodiodes are bonded upon metallizes on the submountswhich enable the photodiode to catch the beams reflected by thewavelength selective filters.

The wavelength selective filters are made by piling two kinds ofdielectric films with different thicknesses and refractive indices inturn on a transparent substrate. The wavelength selective filters shouldbe designed for reflecting only PD-receiving beams and permittingLD-emanating beams to pass. FIG. 13, which is a section along thelongitudinal lightpath Gb, denotes a beam going into the photodiode Db.

Embodiment 7 allows another module to follow the final ends of thelightwaveguides, because the lightwaveguides travel all the length ofthe silicon bench. Embodiment 7 admits another wavelength beams to gointo the waveguides via the rear ends out of another LD module. Thefinal ends of lightwaveguides are not determined by the positions ofoptoelectronic devices unlike former embodiments.

Slanting grooves 60 for embedding the wavelength selective filters canbe made by dicing mechanically. Otherwise, the slanting grooves 60 canbe made by milling the bench by FIB (focused ion beam).

Embodiment 7 has been prepared for bottom incidence type photodiodes,which have advantages of easy fabrication, a wide sensing region andhigh sensitivity. Metallizes Ub, Vb, Ud and Vd extend toward a lowerside (in FIG. 12) and metallizes Va, Ua, Vc and Uc stretch toward ahigher side. Reciprocal wirings have an advantage of reducing electricalcrosstalk between neighboring channels.

Since the photodiodes are lifted up by the submounts above thelightwaveguides, space for the photodiodes is not restricted by thelightpath pitch of E=250 μm. The wavelength selective filters Ma, Mb, Mcand Md, which cross over own lightpaths, are subject to the inequalityE<W<2E−d.

Embodiment 8 (Grating-Carrying LD or PD Module; FIGS. 14 to 17)

The present invention allows modules to interpose gratings halfway onlightwaveguides 7. Embodiment 8 produces gratings on the lightwaveguides7 (Ga, Gb, Gc and Gd). FIG. 14 is a plan view and FIG. 15 is a sectionalview of Embodiment 8. Embodiment 8 includes the lightwaveguides 7,optoelectronic devices Da, Db, Dc and Dd and metallizes Ua to Vd in amanner similar to Embodiment 1. In addition to fundamental portions,Embodiment 8 adds gratings (diffraction elements) Ra, Rb, Rc and Rdmidway on the lightwaveguides 7.

A grating as an individual optical part has a periodic structurerepeating parallel hills and grooves in turn at a predetermined period.The grating period b is determined for satisfying Bragg's condition 2bsin θ=Nλ (N: integer=diffraction number, λ: wavelength, θ: diffractionangle). An individual grating allows an arbitrary diffraction angle θrequired by the condition. But in Embodiment 8, the grating is abuilt-in grating on a bench. The diffraction angle is limited only toθ=90 degrees. Since beams propagate only in the lightwaveguides, bshould be replaced by nb (n:refractive index, b:grating period). Bragg'srestriction is reduced to a simple selection rule nb=Nλ(N:integer=diffraction number). Only a wavelength satisfying λ=nb/N isreflected by the planar grating. The grating permits other wavelengthsto pass through without loss.

Lightwaveguides (cores) have a higher refractive index which is obtainedby doping with germanium (Ge) into the waveguide layers. The silica(SiO₂) refractive index can be modulated by irradiating ultravioletrays. A binary beam interference exposure method induces periodicalrefractive index increments Δn at a pitch b by the interference fringesof the ultraviolet rays on the lightwaveguides by dividing ultravioletlaser beams into two coherent beams, shooting two coherent beams to anobject from both sides, making interference fringes with an arbitrarypitch b on the object and perturbing the refractive index by theultraviolet ray power. Although the change Δn of the refractive index issmall, reflection power can be enhanced by increasing the number ofgrating cells. Since the grating is one kind of diffraction elements,wavelength selectivity is to reflect a specified wavelength and to admitother wavelengths to pass. The grating is different from a dielectricbandpass filter which allows only a single wavelength to pass. Thegratings should be discerned from dielectric bandpass filters.

The built-in gratings enable the LD module to choose oscillationwavelengths of the laser diodes. In this case, a pair of a grating and arear mirror of a laser diode forms a resonator. The length of theresonator is prolonged by the built-in grating. The peak of a laseroscillation spectrum is narrowed by the prolonged resonator. FIG. 16demonstrates a change of spectrum peaks of laser oscillation at apredetermined frequency by the grating R. It is possible todifferentiate four grating periods b for varying oscillation frequenciesof four laser diodes.

Alternatively, built-in gratings can be applied to PD modules inaddition to the LD modules. FIG. 17 demonstrates an example of a PDmodule with a grating R. When a grating is formed on a lightwaveguide,the grating repulses all unnecessary wavelengths and allows only anecessary signal wavelength to pass and reach the photodiodes (PD). Thebuilt-in gratings enable a small-sized photodiode (PD) module to haverigorous wavelength selectivity.

Embodiment 9 (Polarizer, Isolator, Wavelength Selective Filter, LD/PDModule; FIGS. 18 to 21)

Embodiment 9 is an LD or PD module which includes second photoactivedevices Ja, Jb, Jc and Jd which have some functions other than laserdiodes or photodiodes. The modules of the present invention have longbenches, which is pertinent to mount other photoactive devices on thebench. FIG. 18 is a plan view of Embodiment 9 which adds secondphotoactive function devices Ja, Jb, Jc and Jd on Ga, Gb, Gc and Gd. Thepresent invention allows only a part of the lightwaveguides to maintainthe second photoactive devices.

Photoactive devices are, for example, polarizers, isolators, wavelengthselective filters and so on. The polarizer is a device for convertingcircular polarization or elliptical polarization into linearpolarization in a determined direction, as shown in FIG. 19. A planarpolarizer is accessible. The planar polarizer can be fixed into groovesformed on the bench.

The isolator is a complex device consisting of a polarizer, a 45-degreeFaraday rotation element and a 45-degree analyzer, as shown in FIG. 20.

The wavelength selective filter, which can be made by piling dielectricthin films of different refractive indices, has a function of allowingonly a determined wavelength to pass and reflecting other wavelengths,as shown in FIG. 21.

An addition of photoactive devices Ja, Jb, Jc and Jd, for example,polarizers, to the lightwaveguides enables the present invention to makewavelength selective LD modules or PD modules.

Another addition of photoactive devices Ja, Jb, Jc and Jd, for example,isolators, to the lightwaveguides gives the present invention LD modulesor PD modules immune from the reflection returning light, whichdestabilizes the action of laser diodes.

A further addition of photoactive devices Ja, Jb, Jc and Jd, forexample, wavelength selective filters, to the lightwaveguides gives thepresent invention LD modules which excel in monochromacity ofoscillation or PD modules which are sensitive only to a determinedwavelength.

Embodiment 9 has advantages of not only enlarging widths for layinglaser diodes or photodiodes but also widening space W for mounting thesecond photoactive devices in a range of E<W<2E−d. For example, noisolators of a size less than 250 μm is sold on the market. An isolatorincludes a polarizer, a Faraday rotator, an analyzer and a permanentmagnet. Complexity of components prohibits an isolator from diminishingin size. Current technology allows the smallest cylindrical isolators totake a diameter of slightly less than 500 μm. Embodiment 9 can embed thesmallest isolators onto half round grooves formed on thelightwaveguides.

In addition to the second photoactive devices, the present inventionallows LD or PD modules to have third or fourth photoactive devices onwide, long lightwaveguides or on rear ends behind the lightwaveguides.

Embodiment 10 (Photoactive Devices on Extensions, Multichannel LD or PDModule, FIGS. 22 to 24)

Embodiment 10 places second photoactive devices on extensions oflightwaveguides just in front of the laser diodes or the photodiodesinstead of laying on the lightpaths. Here, the second photoactivedevices Ka, Kb, Kc and Kd mean rod lenses, isolators, wavelengthselective filters, polarizers and so on.

FIG. 22 is a plan view of Embodiment 10. FIG. 23 is a sectional view.The figures show an example of rod lenses as second photoactive devices.If a PD module is provided with rod lenses before the photodiodes, therod lenses are effective for converging beams from optical fibers tonarrow forefronts of front incidence type photodiodes. Installation ofrod lenses is more effective for laser diode modules than for PDmodules. If rod lenses are mounted on an LD module, the rod lensconverges beams emitted from the laser diode to a final end of thelightwaveguide with high coupling efficiency. An emission part of an LDis a narrow square less than 0.2 μm×2 μm. Divergence of an LD beam islarge. Without a converging lens, the LD beam fails to go into a narrowlightwaveguide core of a 6 μm square. The rod lenses are useful to guideand converge the LD beams into the lightwaveguides on the bench. Longspace enables the module to install the rod lenses before the laserdiodes in Embodiment 10.

FIG. 24 demonstrates action of the rod lens. The rod lens is acylindrical, transparent optical part with refractive indices changingas a function of a radius r. A rod lens having a higher refractive indexat a center and a lower refractive index at a periphery has convergingfunction like a convex lens.

Other second photoactive devices are polarizers (FIG. 19), isolators(FIG. 20), and wavelength selective filters (FIG. 21) in Embodiment 10.

Embodiment 11 (Modulation, Amplification, Monitoring; FIGS. 25 to 28)

Aforementioned embodiments are all LD modules or PD modules. However,the present invention can be also applied to other photoactive deviceshaving multichannel lightpaths. A feature of the present invention liesin the disposition of photoactive devices at a variety of positions inthe longitudinal direction. Thus, the present invention admitsphotoactive devices, which are modulator, amplifiers, monitors and soforth, to position at different spots on lightwaveguides.

When intervening photoactive devices are included in a module ofEmbodiment 11, the lightpaths should stretch on a bench from the frontto the back.

Embodiment 11 makes holes or cavities on the lightwaveguides on thebench and embeds the photoactive devices. Multichannel beams propagatingin the lightpaths experience the functions of the photoactive devices.

FIG. 25 is a plan view of Embodiment 11. FIG. 26 is a sectional view cuton a lateral line crossing Db. FIG. 27 is a sectional view cut alongitudinal line crossing Db. Holes Ca, Cb, Cc and Cd are perforatedhalfway at different lengths on the lightwaveguides Ga, Gb, Gc and Gd.Metallized patterns Ua–Ud and Va–Vd are prepared on the bench for wiringthe optoelectronic devices with leadpins. Since positions of the holesare different in the longitudinal direction, enough space for boringholes are secured. Embodiment 12 provides the holes Ca, Cb, Cc and Cdwith optoelectronic devices Da, Db, Dc and Dd. As shown in FIGS. 26 and27, boring of holes enables the heights of active layers of Da, Db, Dcand Dd to be on a level with the lightwaveguides.

Two four-channel ribbonfibers 20 and 20 are connected at the front andat the back of Embodiment 11 by MT connectors 22 and 22. The MTconnectors 22 maintain ends of the ribbonfibers 20. The module hasguidepins 23. The MT connectors have guideholes 24. The MT connectorscan be attached to or detached from the module by action of guidepinsand guideholes. Allocation of guidepins and guideholes to a module or aconnector is optional. When the photoactive devices Da, Db, Dc and Ddare modulators, semiconductor modulators or dielectric modulators(LiNbO₃) are available. Light beams modulated by the modulators Da, Db,Dc and Dd go out of the module from the final ends of Ga, Gb, Gc, andGd.

When the photoactive devices Da, Db, Dc and Dd are photoamplifiers, themodule can amplify incidence beams propagating from the front ends andemit amplified beams from the rear ends. As shown in FIG. 28, aphotoamplifier is prepared by biasing a laser diode at a positivevoltage Vi slightly below the threshold voltage Vth. An additionalincident beam into the laser diode makes a stronger beam by action ofthe positive bias. Another photoamplifier based upon different actionsis also available.

Other candidates for the photoactive devices Da, Db, Dc and Dd arephotodiodes for monitoring light power of propagating in the lightpaths.Front incidence type photodiodes are suitable for monitoringphotodiodes. The monitoring photodiodes absorb a part of propagatinglight beams and allow the rest to pass therethrough. The module having aset of monitoring photodiodes should be interposed midway in aribbonfiber for checking power of propagating signal beams.

Besides the photoactive devices, fiber gratings Ra, Rb, Rc and Rd can beinterposed into lightpaths for excluding unnecessary wavelengths andselecting necessary wavelengths for the following optical circuits. Thefiber gratings can cooperate with photomodulators, photoamplifiers andwavelength selective filters formed on the same lightpaths. The grating,which reflects a predetermined wavelength, heightens the selectivefunction of the wavelength selective filter which admits anotherwavelength to pass.

The long lightpaths allow to add extra useful functions to the module.Addition of other functions makes complex photoactive modules having asize equal to the size of prevalent surface mountable modules.

Embodiment 12 (Inline-Monitor, Bottom Incidence Type PD; FIGS. 29 and30)

Embodiment 11 describes an inline-monitor having a front incidence typephotodiode which absorbs a part of light and admits the rest to pass.The front incident PD causes large loss of power. Embodiment 11 proposedthe low-loss inline-monitor based upon bottom incidence typephotodiodes.

Embodiment 7 reflects all the power and detects all the power by thebottom incidence type photodiodes. Otherwise, Embodiment 12 reflects andabsorbs a part of light power propagating in the lightpaths.

FIG. 29 is a plan view of the inline-monitor. FIG. 30 is a sectionalview of the same. Lightwaveguides Ga, Gb, Gc and Gd have bottomincidence type photodiodes Da, Db, Dc and Dd mounted upon submounts Baligning in a slanting direction for avoiding mutual collisions.

There are four allowable positions (n=4) on the lightpaths in thelongitudinal direction. 108 sets of arrangements are possible. FIG. 29shows only one set. Slanting partial mirrors Ma, Mb, Mc and Md aredisposed just behind the submounts and the photodiodes. A part (5% to10%) of propagating light is reflected by the partial mirrors slantinglyupward. Reflected beams go via holes of the submounts B, enter bottomsof the photodiodes and induce photocurrent. The rest of the light passesthe mirrors, propagates in the lightpaths, passes the MT connector andarrives at element fibers in a ribbonfiber. The inline-monitor hasadvantages of high sensitivity, low interchannel crosstalk and facilealignment.

1. An multichannel optical communications module comprising: a bench; mparallel linear lightpaths being produced overall upon the bench, havinga width d, and aligned in parallel with a pitch E which is equal to apitch of multichannel element fibers; and m photoactive device chipshaving a width W satisfying an inequality of E<W<2E−d and beinginstalled at one of n different sites allotted on the lightpaths whichis different from neighboring sites in a longitudinal direction.
 2. Themultichannel optical communications module according to claim 1, whereinthe photoactive device chips are bottom incidence type photodiodesinstalled via submounts above the lightpaths and mirrors are slantinglyfixed in front of the bottom incidence type photodiodes on thelightpaths for reflecting light beams propagating in the lightpaths upto the bottom incidence type photodiodes.
 3. The multichannel opticalcommunications module according to claim 2, wherein the bench is asilicon bench.
 4. The multichannel optical communications moduleaccording to claim 3, further comprising guidepins or guideholes forattaching to or detaching from an outer connector holding an m-channelribbonfiber.
 5. The multichannel optical communications module accordingto claim 4, further comprising a leadframe which is fitted on a bottomof the bench.
 6. The multichannel optical communications moduleaccording to claim 5, further comprising a plastic package which is madeby transfermolding the bench and the leadframe with a resin in ametallic mould.
 7. The multichannel optical communications moduleaccording to claim 4, further comprising gratings furnished on thelightpaths for reflecting a predetermined wavelength.
 8. Themultichannel optical communications module according to claim 1, whereinthe photoactive device chips are photoamplifiers, photomodulators,wavelength selective filters, front incidence type photodiodes,isolators or polarizers which are installed in holes perforated at oneof n points different in a longitudinal direction on the lightpaths forallowing light beams propagating in the lightpaths to pass through.